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出 处:《Journal of Semiconductors》2005年第9期1731-1739,共9页半导体学报(英文版)
基 金:国家自然科学基金(批准号:90407006);国家重点基础研究发展计划(批准号:G2000036508)资助项目~~
摘 要:A 2. 4GHz CMOS monolithic transceiver front-end for IEEE 802. llb wireless LAN applications is presented. The receiver and transmitter are both of superheterodyne structure for good system performance. The frontend consists of five blocks., low noise amplifier,down-converter, up-converter, pre-amplifier, and LO buffer. Their input/output impedance are all on-chip matched to 50 Ω except the down-converter which has open-drain outputs. The transceiver RF front-end has been implemented in a 0. 18μm CMOS process. When the LNA and the down-converter are directly connected, the measured noise figure is 5.2dB, the measured available power gain 12. 5dB, the input l dB compression point --18dBm,and the third-order input intercept point --7dBm. The receiver front-end draws 13.6mA currents from the 1.8V power supply. When the up-converter and pre-amplifier are directly connected, the measured noise figure is 12.4dB, the power gain is 23. 8dB, the output ldB compression point is 1.5dBm, and the third-order output intercept point is 16dBm. The transmitter consumes 27.6mA current from the 1.8V power supply.实现了一个应用于IEEE802.11b无线局域网系统的2.4GHzCMOS单片收发机射频前端,它的接收机和发射机都采用了性能优良的超外差结构.该射频前端由五个模块组成:低噪声放大器、下变频器、上变频器、末前级和LO缓冲器.除了下变频器的输出采用了开漏级输出外,各模块的输入、输出端都在片匹配到50Ω.该射频前端已经采用0.18μmCMOS工艺实现.当低噪声放大器和下变频器直接级联时,测量到的噪声系数约为5.2dB,功率增益为12.5dB,输入1dB压缩点约为-18dBm,输入三阶交调点约为-7dBm.当上变频器和末前级直接级联时,测量到的噪声系数约为12.4dB,功率增益约为23.8dB,输出1dB压缩点约为1.5dBm,输出三阶交调点约为16dBm.接收机射频前端和发射机射频前端都采用1.8V电源,消耗的电流分别为13.6和27.6mA.
关 键 词:wireless transceiver RF CMOS LNA mixer PREAMPLIFIER
分 类 号:TN925.93[电子电信—通信与信息系统]
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