CMOS离子敏场效应管SPICE模型  

SPICE model for CMOS ISFET

作　　者：刘肃[1] 韩富强[1] 于峰崎[2] 

机构地区：[1]兰州大学微电子系,甘肃兰州730000 [2]苏州中科集成电路设计中心,江苏苏州215021

出　　处：《传感器技术》2005年第10期16-18,22,共4页Journal of Transducer Technology

摘　　要：完全用CMOS工艺实现离子敏场效应型晶体管(ISFET)成为可能,这种ISFET的栅极结构是由绝缘体、多晶硅、金属层叠起来,称之为多层栅结构。从ISFET的传感机理出发,通过分析金属氧化物场效应晶体管(MOSFET)阈值电压的原理,利用通用电路模拟程序(SPICE)建立了这种多层栅结构ISFET的物理模型,并对其静态输入输出特性进行仿真,仿真结果和试验数据基本相符。It is possible to fabricate ISFET entirely using CMOS process. The gate structure of the ISFET is a multilayer,which consists of insulator,poly and metal. So it is called multilayer-gate. According to the principle of threshold voltage of MOSFET, a physical model for the muhilayer-gate ISFET in SPICE is founded, and the static intput-output characteristic of the ISFET is simulated. The simulation results agree with the experiments.

关 键 词：离子敏场效应晶体管 器件模型 通用电路模拟程序 

分 类 号：TN4[电子电信—微电子学与固体电子学]