新型光泵浦垂直外腔面发射半导体激光器  

An Novel Laser-Optically Pumped Vertical External Cavity Surface Emission Laser

作　　者：宋晏蓉[1] 郭晓萍[2] 王勇刚[1] 陈檬[2] 李港[2] 于未茗[1] 胡江海[1] 张志刚[1] 

机构地区：[1]北京工业大学应用数理学院光学国家重点学科,北京100022 [2]北京工业大学激光工程学院光学国家重点学科,北京100022

出　　处：《光子学报》2005年第10期1448-1450,共3页Acta Photonica Sinica

基　　金：北京市优秀人才培养专项经费;北京工业大学博士启动经费资助

摘　　要：用量子阱技术生长的半导体材料作激光增益介质,Al GaAs/GaAs对做布喇格反射镜,并以简单的平凹腔做谐振腔,半导体激光器作泵浦源,制作出了光泵垂直外腔面发射半导体激光器.在抽运功率1.5W时,得到了中心波长1005nm、最大输出功率40mW的激光,光-光转换效率2.7%.A novel laser-optically pumped vertical external cavity surface emitting laser was demonstrated. A diode laser was employed as a pump source. The gain structure of the semiconductor was quantum wells grown by MOCVD technology. By adjusting the cavity which was typically plane-concaved structure carefully,the laser was obtained at 1005 nm centre wavelength and the output power was 40 roW. The optical-optical efficiencv was 2.7%.

关 键 词：面发射半导体激光器 光泵浦 量子阱 增益芯片 

分 类 号：TN248.4[电子电信—物理电子学]