孔径型超分辨近场结构光盘的电磁场分析  

Electromagnetic Field Analysis for TA Type Super-RENS in Optical Storages

作　　者：沈全洪[1] 徐端颐[1] 马建设[1] 刘嵘[1] 齐国生[1] 

机构地区：[1]清华大学精密仪器与机械学系光盘国家工程研究中心,北京100084

出　　处：《光电子．激光》2005年第10期1182-1186,共5页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究发展规划资助项目(G19990330)

摘　　要：采用三维时域有限差分(3D-FDTD)方法建立了孔径(TA)型超分辨近场结构(super-RENS)光盘的电磁场计算模型。计算中,用矢量基模高斯光束模型作为聚焦光束的近似,用Lorentz模型描述掩膜介质Sb和反射层介质A1在光频段的色散特性。对写入和读出过程中的电场分布进行了理论分析,并与普通CD-R/W光盘进行了比较。理论计算结果很好地说明了TA型super-RENS光盘写入和读出时的电场分布特性,从本质上解释了超分辨率读写的机制,得到了和实验一致的结果。A calculation model of electromagnetic field of transmitted-aperture（TA） type super-resolution near-field structure（super-RENS） disk based on three-dimensional finitedifference time-domain（3D-FDTD） method and a vector method of Gaussian beam was presented. Lorenz dispersive model was employed for mask layer material Sb and reflective layer material Al. The distributions of electric field for TA type super-RENS during writing and reading process were theoretically analyzed,as well as that of traditional CDR/W. The calculation results described the electric field properties of TA type super-RENS and discovered the fundamentals of super-resolution essentially. The theoretical results were satisfied with the experiments very well.

关 键 词：光存储 超分辨近场结构(super-RENS) 孔径(TA)型 时域有限差分(FDTD)法 电磁场 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]