Φ100快速晶闸管的研制  

Development of Φ100 Fast Switching Thyristors

作　　者：高山城[1] 郭永忠[1] 吴涛[1] 李玉玲[1] 

机构地区：[1]西安电力电子技术研究所,陕西西安710061

出　　处：《电力电子技术》2005年第5期133-134,共2页Power Electronics

摘　　要：通过计算机模拟运算,分析了低浓度短基区、缓变杂质分布阻断结和临界长基区等优化设计方案,最大限度地对阻断电压、通态压降和关断时间等矛盾参数进行了协调,成功地研制了Φ1002800V,3500A快速晶闸管。This paper describes optimum design and manufacture of the most powerful fast switching thyristors in the world. By computer simulation,a low concentration profile in space charging region, slow gradient for blocking junction and critical narrow-base structure are formed. Tested parameters of the devices produced show the best compromise of blocking-voltage, on-state voltage drop and turn-off time.

关 键 词：晶闸管 设计 研制/阻断电压 

分 类 号：TN342[电子电信—物理电子学]