多层片式ZnO压敏电阻器内电极材料研究  

Reseach on Inner Electrode of Multilayer Chip Varistor

作　　者：钟明峰[1] 苏达根[1] 庄严 

机构地区：[1]华南理工大学特种功能材料及其制备新技术教育部重点实验室,广东广州510640 [2]广州新日电子有限公司,广东广州510335

出　　处：《电子元件与材料》2005年第11期8-9,共2页Electronic Components And Materials

基　　金：广州市重点科技攻关项目(2002Z2-D0011)

摘　　要：把三种不同钯银比例的浆料用作多层片式ZnO压敏电阻器(MLCV)的内电极材料,并研究了它们对MLCV电性能的影响。结果表明:含钯内电极材料的压敏电阻的电性能,明显优于纯银内电极的压敏电阻。压敏电阻的限制电压与压敏电压比(Vc/V1mA)及漏电流(IL)随着钯含量的升高而减小;非线性系数(α)、峰值电流(Ip)及能量耐量(ET),随着钯含量的升高而提高。分析认为,随着内电极材料中Ag含量的升高,Ag+的扩散增加,导致晶粒电阻增加,即施主浓度(Nd)减少,势垒高度(■)升高,致使MLCV的电性能劣化。The effect of three kinds of inner electrode with different palladium content on electric properties of MLCV was investigated. The results show that the MLCV electric properties of silver-palladium inner electrode are better than that of pure sliver inner electrode. The ratio of clamping voltage and breakdown voltage（Vc/V1mA） and leakage current（IL） of MLCV decrease with the increase of palladium content in inner electrodes. The nonlinearity coefficient （a）, the peak current （Ip） and the maximum surge energy（ET） increase with the increase of palladium content in inner electrodes. While the increase of silver content in inner electrodes, the Ag^＋ diffusion increases, the grain resistance increases, namely the donor density decreases, barrier height increases, and the electric properties of MLCV deteriorate.

关 键 词：电子技术 多层片式压敏电阻器 电性能 内电极材料 钯含量 

分 类 号：TN304[电子电信—物理电子学]