热处理对SILAR法制备CuInSe_2薄膜性能的影响  

Effects of Post-heat Treatment on Performance of Chalcopyrite CuInSe_2 Film Prepared by SILAR Method

作　　者：杨建立[1] 靳正国[1] 石勇[1] 李春艳[1] 安贺松[1] 

机构地区：[1]天津大学先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《无机化学学报》2005年第11期1701-1704,共4页Chinese Journal of Inorganic Chemistry

基　　金：天津市重点基础研究项目(No.33802311)资助。

摘　　要：铜铟硒（CIS）具有合适的带隙、高光吸收系数、适当的电荷密度和迁移率。是一种用于薄膜太阳能电池的备受关注的吸收材料。目前CuInSe2薄膜已采用多种方法进行制备，如金属前驱体硒化法、共沉积法、溅射法、电沉积法和化学气相沉积法等。这些方法都有各自的不足之处。例如，对于气相硒化技术必须要用到硒化氢。而硒化氢对人体和环境都有很大的危害。如何精确控制薄膜组分和微结构并改善其电学和光学性能仍是当前研究的重点。CuInSe2 ternary films were prepared by successive ionic layer absorption and reaction （SILAR） method. The films were deposited on glass substrates at room temperature and subject to heat-treatment under Ar atmosphere at various calcination temperatures, and then characterized by using X-ray diffraction （XRD）, scanning electron microscopy （SEM）, X-ray photoelectron spectroscopy （XPS）, optical absorption spectroscopy. XRD results showed that chalcopyrite structure CuInSe2 with high degree of preferred orientation towards （112） reflection could be obtained by post-heat treatment. The compositions of films calcined at 300～400℃ were close to the standard stoichiometry and CI impurity decreased after calcination. The direct band gap increased from 0.94 eV to 0.98 eV with the increase of calcination temperature.

关 键 词：CuInSe2薄膜 SILAR法 煅烧温度 化学性能 

分 类 号：O614.242[理学—无机化学]