孔径型超分辨近场结构光盘的掩膜热效应分析  

Laser-induced thermal analysis for mask layer of transmitted-aperture type super-RENS in optical storage

作　　者：沈全洪[1] 徐端颐[1] 齐国生[1] 胡恒[1] 刘嵘[1] 

机构地区：[1]清华大学精密仪器与机械学系,光盘国家工程研究中心,北京100084

出　　处：《物理学报》2005年第10期4718-4722,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:G19990330)资助的课题.~~

摘　　要：基于高斯聚焦激光束热效应的超分辨近场结构光盘存储(孔径型Super_RENS)中,应用光学特性导纳矩阵建立的盘片光传导模型,采用有限元分析软件FEMLAB对不同激光功率和脉宽下的Sb掩膜层的孔径形成情况进行数值仿真.结果表明,当一定脉宽的激光功率超过介质的阈值时,掩膜层将有超分辨孔径形成,且孔径大小随功率的增大而增大.理论分析与孔径型Super_RENS光盘样片在不同激光功率下进行写入的实验结果相符,说明光热效应可以较好地描述孔径型Super_RENS光盘掩膜层孔径形成的过程.The forming of transmitted-aperture in Sb layer of Super-RENS was studied based on laser-induced thermal model with Gauss assumption. The optical transmit model was created with optical admittance characteristic matrix. A numerical simulation was carried out by FEMLAB to understand the forming process of the aperture. The simulation results showed that transmitted aperture would not be formed until the exposure power exceeded a threshold within a certain pulse time, further more, the aperture size would be increased if the power was raised. The static writing experiment for transmitted-aperture type Super-RENS was carried out. The experiment results well agree with the simulation. It is concluded that a laser-induced thermal model could well describe the forming of aperture in Sb layer of transmitted-aperture type Super-RENS in optical data storage.

关 键 词：光存储 孔径型 超分辨近场结构 光热效应 孔径大小 热效应分析 光盘存储 SUPER-RENS 有限元分析软件 激光功率 

分 类 号：TQ591[化学工程—精细化工]