Cu(In,Ga)Se_2材料成分对其电池性能的影响  

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

作　　者：刘芳芳[1] 何青[1] 李凤岩[1] 敖建平[1] 孙国忠[1] 周志强[1] 孙云[1] 

机构地区：[1]南开大学信息技术科学学院光电子薄膜器件与技术研究所,天津300071

出　　处：《Journal of Semiconductors》2005年第10期1954-1958,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2004AA513021)~~

摘　　要：利用三步共蒸发法制备铜铟硒薄膜太阳电池中的吸收层CIGS薄膜,采用多种测试手段,研究其成分比例与薄膜的电阻率、载流子浓度、表面粗糙度之间的关系.电阻率为102～103Ω·cm之间,是Cu、Ⅲ族元素、Se配比较为合适的区域.载流子浓度在1015～1016cm-3范围内,薄膜表面粗糙度是随着Cu/(Ga+In)比呈下降趋势,Cu越多,表面越光滑,当Cu/(Ga+In)比超过1.25以后,变化趋势逐渐减弱.当Cu/(Ga+In)比在1.0附近时,粗糙度处于30～60nm之间.在上述范围内,研制出转换效率为12.1%的CIGS薄膜太阳电池.Cu（In,Ga）Se2 （CIGS） thin films are prepared using a three-step co-evaporation process. Through different measurements,the relationship between compositional ratios and several characteristics （for example resistivity, carrier concentration, and surface roughness） are studied. The range is suitable for Ⅲ and Se contents,when the resistivity and carrier concentration are 10^2～10^3Q·cm and 10^15～10^16cm^-3 , respectively. Moreover, the values of surface roughness decrease when the Cu/（Ga＋ In） ratio decreases. When the ratio is beyond 1.25, the change becomes slight. When it is near 1.0, the roughness ranges are between 30-60nm. The maximum conversion efficiency reaches 12.1% （test condition： AM1.5 ,Global 1000W/m^2 ）.

关 键 词：CIGS薄膜 太阳电池 转换效率 成分比例 

分 类 号：TM914[电气工程—电力电子与电力传动]