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机构地区:[1]黑龙江大学集成电路重点实验室,黑龙江哈尔滨150080
出 处:《黑龙江大学自然科学学报》2005年第5期697-700,共4页Journal of Natural Science of Heilongjiang University
基 金:黑龙江大学集成电路重点实验室项目
摘 要:(100)硅片在EPW腐蚀液中进行各向异性腐蚀时,因在(111)侧面相交的凸角处出现一些腐蚀速率较高的晶面,使微悬臂梁凸角掩膜下的硅受到侧向腐蚀,出现严重的凸角削角现象.研究采用EPW腐蚀(100)硅片制作微悬臂梁的凸角补偿方法及制作工艺,给出采用圆形掩膜对(100)硅凸角进行补偿.实验结果表明,该方法能够较好的完成对EPW腐蚀液中悬臂梁凸角削角的补偿。When the silicon is etched (100) anisotropicly in EPW, some wafers, which had higher etching rate, occurred at the convex comer of intersection of two (111) sides, that made silicon of micro-cantilever beam under convex comers mask be etched sidelong, phenomenon of convex comers and short corners occurred. We present compensation of convex corners and fabrication technology of cantilever beam, which is manufactured on (100) silicon etched by EPW, and take use of spherical mask to compensate them. The experiment result shows that the compensation of convex corners and short corners of cantilever beam in EPW by the method.
分 类 号:TN304[电子电信—物理电子学]
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