用掺杂方法改变VO_2多晶薄膜相变温度研究  

Change of Phase Transition Temperature of Polycrystalline Vanadium Dioxide Film by Doping Methods

作　　者：谢建生[1] 李金华[1] 袁宁一[1] 陈汉松[1] 周懿[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213016

出　　处：《江苏工业学院学报》2005年第3期1-5,共5页Journal of Jiangsu Polytechnic University

基　　金：国家自然科学基金(60277019);江苏省自然科学基金(BK2005023)

摘　　要：用离子束增强沉积方法对二氧化钒多晶薄膜作Ar和W掺杂,明显改变了二氧化钒薄膜的相变温度。研究表明,成膜时注入的氩在二氧化钒结构形成前就很快外释,掺杂Ar对相变温度降低的贡献主要来自间隙Ar。W原子的掺杂可有效地将二氧化钒多晶薄膜的相变温度降低到室温附近,为大幅提高薄膜的室温电阻-温度系数提供了可能。Polycrystalline VO2 films doped with argon and tungsten were prepared by modified Ion Beam Enhanced Deposition （IBED） method. The experiment results indicated that the phase transition temperature （To） of the doped IBED VO2 films were decreased evidently compared to un--doping VO2 films. The most of implanted Ar atoms in the as--IBED films will diffuse out before crystallization. The remaining Ar will appear at the interstitial site of the VOz lattice and the boundary of the grain. The effect of argon doping on the phase transition temperature was mainly contributed by the Ar at the interstitial site. Tungsten doping could decrease effectively the To of the vanadium dioxide film to room temperature. It is possible to increase the temperature coefficient of resistance of the films for IR application.

关 键 词：二氧化钒薄膜 掺杂改性 相变 

分 类 号：TN213[电子电信—物理电子学] O552.6[理学—热学与物质分子运动论]