硫酸盐掺杂对KDP晶体生长的影响  

Effects of sulphate doping on the growth habit of KDP crystal

作　　者：张建芹[1] 王圣来[1] 房昌水[1] 孙洵[1] 顾庆天[1] 李毅平[1] 王坤鹏[1] 王波[1] 李云南[1] 刘冰[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《功能材料》2005年第10期1505-1508,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(59823003)

摘　　要：SO42-是KDP原料中一种常见的杂质离子,通过传统降温法和“点籽晶”快速生长法研究了掺杂K2SO4的KDP晶体的生长。实验表明,硫酸根低浓度掺杂时可提高溶液的稳定性,促进晶体的生长,造成柱面扩展;高浓度时溶液稳定性遭到破坏,出现杂晶,晶体生长速度变慢,晶体出现开裂,柱面发生“楔化”。SO4^2- is a common impurity ion in KDP raw materials. KDP crystals were grown from a solution doped with a small amount of sulphate by the traditional temperature-lowering method and by using a “point seed” technique. It is showed that the growth rate increased, the stability of the growth solution was improved to some extent and extension of prism sectors was observed when at low dopant eoneentration（≤1. 0 × 10^-4/mol） ; with the increase of the dopant concentration the growth rate of the whole crystal decreased, crystals cracked and prism sectors tapered to some extent. KDP crystals cracked at certain dopant concentration of SO4^1-, which is of great significance to the growth of KDP large size erystals. So we must redueel the concentration of SO4^2- during the growth of large KDP crystals.

关 键 词：硫酸根 KDP晶体 晶体生长 快速生长 

分 类 号：O782.1[理学—晶体学]