背照式电荷耦合器件的研制  

Development of Back-illuminated Charge-coupled Device

作　　者：戴丽英[1] 刘德林[1] 李慧蕊[1] 钟伟俊[1] 张心建[1] 扬卉[1] 

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《光电子技术》2005年第3期146-149,共4页Optoelectronic Technology

摘　　要：简要介绍了背照电荷耦合器件的工作原理、潜在优势和应用领域。设计了对常规电荷耦合器件芯片进行衬底减薄进而实现背照电荷耦合器件的技术方案。给出了相关的设计方法和工艺流程并对关键工艺技术进行了探讨。对所制成的背照电荷耦合器件组件的性能进行了分析和讨论。结果表明所提出并采用的技术方案是可行的。The operation principle, potential merits and application area of back-illuminated charge-coupled devices are presented briefly. The technical scheme for implementing the back-illuminated charge-coupled device by thinning the substrate of a conventional charge-coupled device chip is studied. The relative design method and fabrication process are given and the key fabrication steps are investigated. The performances of the realized back-illuminated charge-coupled device module are analyzed and discussed. Results indicate that the proposed technology is feasible.

关 键 词：电荷耦合器件 背照 成像 衬底减薄 

分 类 号：TN386.5[电子电信—物理电子学]