夹心结构FeNi/Cu／FeNi多层膜巨磁阻抗效应的研究  

Giant Magneto-Impedance in Sandwiched FeNi/Gu/FeNi films

作　　者：商干兵[1,2] 高孝裕[1,2] 余先育[1,2] 曹莹[1,2] 丁文[1,2] 周志敏[1,2] 周勇[1,2] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家级重点实验室,上海200030 [2]上海交通大学微纳科学技术研究院薄膜与微细技术教育部重点实验室,上海200030

出　　处：《信息记录材料》2005年第4期37-40,共4页Information Recording Materials

基　　金：国家高技术研究发展计划(863)项目"2004AA302042";国家自然科学基金项目"50275096";"10402023";上海市纳米专项"0352nm014"的资助

摘　　要：采用MEMS技术在玻璃基片上制备了夹心结构FeNi/Cu/FeNi多层膜,在100KHz-40MHz范围内研究了FeNi/Cu/FeNi多层膜中的巨磁阻抗效应特性。当磁场Hext施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应。在频率为5MHz时,巨磁阻抗效应在磁场Hext=800A/m时达到最大值25．2％;在磁场Hext=9600A／m时,巨磁阻抗效应为-7．3％。巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关。另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率5MHz、磁场Hext=9600A/m时,巨磁阻抗效应可达-19．3％。Sandwiched FeNi/Cu/FeNi films were prepared by MEMS （Microelectromechanical Systems ） technique on glass substrate. The giant magneto-impedance （GMI） effect was investigated in the frequency range of 100KHz - 40MHz. With magnetic field Hext, applied along the longitudinal direction of the sample, the GMI ratio increases with Hext, reaching a positive maximum value at a certain field and then decreases to the negative GMI ratio with further increase of Hext. At a frequency of 5 MHz, the positive maximum GMI ratio is 25. 2% for Hext = 800A/m, and a larger negative GMI ratio, - 7. 3% is obtained for Hext = 9600A/m. In addition, with the magnetic field applied along the transverse direction, the GMI ratio is negative and a negative GMI ratio, - 19. 3% is obtained at 5MHz for Hoxt =9600A/m.

关 键 词：巨磁阻抗效应 夹心结构FeNi/Cu/FeNi多层膜 MEMS技术. 

分 类 号：O484.43[理学—固体物理]