掺杂LiNbO_3晶体的生长缺陷与其体全息存储性能的研究  

Study on the Growth Defects of Doped LiNbO_3 Crystals and Their Properties of Compact Volume Holographic Storage

作　　者：刘金伟[1] 刘国庆[1] 江竹青[1] 陶世荃 

机构地区：[1]北京工业大学应用数理学院,北京100022

出　　处：《人工晶体学报》2005年第5期865-869,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.69977005);北京市教委科技发展计划资助项目(No.05006012200201)

摘　　要：本文叙述了利用侵蚀法研究掺杂L iNbO3的晶体缺陷,并讨论了晶体缺陷的形成机理以及其与体全息存储性能的关系。通过实验发现了常温下侵蚀铌酸锂晶体的规律,并利用侵蚀法观测到铌酸锂晶体样品表面呈三角锥状的位错侵蚀坑。测量了晶体样品的散射噪声,从中找出了晶体缺陷与存储图像质量关系。并发现掺Zn的Fe:L iNbO3晶体其晶体缺陷减少,晶体体全息存储性能有了明显提高。In this paper, the defects,their formation mechanisms and the properties of compact volume holographic storage of doped LiNbO3 crystals were analyzed and discussed by using the observing method of etching. We try to find out the laws of the crystal etching in the normal temperature according to the experiment, and observed the dislocation etching pits which is a angle taper on the surface of LiNbO3 crystals. We measured the spread noise of doped LiNbO3 crystals, finding out the relation between the crystal defects and picture quality according to the experiment. At last, we find that the crystal defects of Zn ： Fe ： LiNbO3 are less than Fe ： LiNbO3, and the properties of compact volume holographic storage of the Zn ： Fe ： LiNbO3 are better than Fe ： LiNbO3.

关 键 词：铌酸锂晶体 位错缺陷 侵蚀观测法 散射噪声 体全息存储 

分 类 号：O77[理学—晶体学]