Cu含量对FePt薄膜退火温度的影响  

The Effect of Cu Content on the Annealing Temperature of FePt Thin Films

作　　者：王芳[1] 许小红[1] 武海顺[1] 

机构地区：[1]山西师范大学,山西临汾041004

出　　处：《稀有金属材料与工程》2005年第10期1578-1581,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(20341005);山西省自然科学基金(20041032)联合资助

摘　　要：采用共溅射方法在玻璃基片上制备了(FePt)1-xCux合金薄膜,FePt合金中添加Cu可以有效降低退火温度,(FePt)1-xCux(x=19.5%)在350℃退火后可以使面内矫顽力Hc∥达到200kA/m,垂直矫顽力Hc⊥达到280kA/m左右,而纯FePt仅有几千A/m。X射线衍射结果表明退火后形成的FePtCu三元合金是降低退火温度的主要原因。剩磁曲线分析表明Cu的加入不能明显降低晶粒间交换耦合作用。(FePt)1-xCux在400℃退火可以得到10-24m3的磁激活体积。The （FePt）1-xCux thin films were deposited directly on glass substrates by cosputtering techniques. We have found that the addition of Cu to FePt alloy film is an effective approach for reducing the annealing temperature of FePt. After annealing at 350℃ the Hc〃 and Hc⊥ of （FePt）1-xCux（x=19.5） film are around 200 kA/m and 280 kA/m, respectively, whereas that of pure FePt film shows several thousand A/m. The results of X-ray diffraction indicate that a ternary FePtCu alloy is formed. Thus, the formation of the ternary FePtCu alloy is considered to play an important role in reducing the ordering temperature. The analysis for the remanence curves show that the addition of Cu can not decrease the intergranular interaction obviously. After annealing at 400℃, a small magnetic activation volume of the order of 10^-24m^3 iS obtained.

关 键 词：FePt薄膜 退火温度 剩磁曲线 磁激活体积 

分 类 号：TM27[一般工业技术—材料科学与工程]