SPS法制备p-型四元Al-Bi-Sb-Te合金的微结构与热电性能  

Microstructures and thermoelectric properties of p-type quaternary Al-Bi-Sb-Te alloys prepared by spark plasma sintering

作　　者：崔教林[1] 杨炜[1] 赵伟敏[1] 徐雪波[1] 

机构地区：[1]宁波工程学院机械工程学院,宁波315016

出　　处：《中国有色金属学报》2005年第10期1526-1531,共6页The Chinese Journal of Nonferrous Metals

基　　金：浙江省自然科学基金资助项目(Y404321);宁波市博士点基金资助项目(2003A62008)

摘　　要：采用SPS法制备了p-型四元Al-Bi-Sb-Te合金,研究其微结构和热电性能.结果表明:Al含量直接影响材料的电、热学输运性能.当材料中Al替代Sb元素后,四元合金AlxBi0.5Sb15-xTe3(x=0.05～0.2)的电导率明显增大;在室温附近,x=0.1的合金其电导率可达3.3×104Ω-1·m-1,大约是三元Bi0.5Sb1.5 Te3合金的2倍;四元合金系的最小Seebeck系数α为115μV/K,说明材料属p-型半导体;当温度为411 K时,合金AlxBi0.5-Sb1.5-xTe3(x=0.1)的ZT值出现最大值,其值为0.58,是同温度下典型三元Bi0.5Sb1.5Te3合金的1.6倍.The microstructures and thermoelectric properties of p-type quaternary Al-Bi-Sb-Te alloys fabricated by spark plasma sintering technique were investigated. The results reveal that the crystal constants are directly related to Al content that is critical to determine the electrical and thermal conductivities. The electrical conductivity （σ） of 3.3×10^4Ω·m^-1 for A, Bi0. sSbl. s ,Te3 alloy （x=0. 1） was obtained near room temperature, which is twice as large as that of ternary AlxBi0.5Sb1.5-xTe3 alloy, The minimum Seebeck coefficient （α） of all the quaternary Al-Bi-Sb-Te alloys is 115μV/K, indicating p-type conducting behavior, The dimensionless figure of merit （ZT） of 0.58 is achieved at 411 K, being about 1.6 times as large as that of typical ternary Bi0.5Sb1.5-Te3 alloy at the same temperature.

关 键 词：四元Al—Bi—Sb—Te合金 放电等离子烧结系统 微结构 热电性能 

分 类 号：TN304[电子电信—物理电子学]