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出 处:《Chinese Science Bulletin》2005年第18期1991-1994,共4页
基 金:This work was supported by the Major State Basic Research Development Program(Grant No.2002CB6l3401);the National Natural Science Foundation of China(Grant No.20474023);the Program for Changjiang Scholars and lnnovative Research Team in University.
摘 要:The spectral and polarity dependence of the quantum yield of charge carrier photo-generation was stud-ied by steady-state photocurrent measurement in a single layer PhPPV film, double layer film of PhPPV and R6G and doped film of PhPPV with R6G. The intrinsic and extrinsic charge carrier photogeneration was observed. The result indicates that the quantum efficiency of the double layer device is higher than that of single layer device under reverse bias, but it is opposite under forward bias. The yield of charge carrier photogeneration of the doped film is higher than that of the other two films at both forward and reverse bias because of the increased interface area between the electron donor and acceptor.The spectral and polarity dependence of the quantum yield of charge carrier photo-generation was studied by steady-state photocurrent measurement in a single layer PhPPV film, double layer film of PhPPV and R6G and doped film of PhPPV with R6G. The intrinsic and extrinsic charge carrier photogeneration was observed. The result indicates that the quantum efficiency of the double layer device is higher than that of single layer device under reverse bias, but it is opposite under forward bias. The yield of charge carrier photogeneration of the doped film is higher than that of the other two films at both forward and reverse bias because of the increased interface area between the electron donor and acceptor.
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