阵列式薄膜锰铜传感器的研究  

Research on Manganin Thin Film Transducer Array

作　　者：滕林[1] 杨邦朝[1] 杜晓松[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《电子测量与仪器学报》2005年第4期61-63,共3页Journal of Electronic Measurement and Instrumentation

基　　金：为军事电子预研基金资助项目(项目编号:AW030412)。

摘　　要：采用薄膜工艺制备适合高压力测量的阵列式传感器,文中介绍了该传感器的制造工艺、工作原理。动态加载实验表明,传感器阵列的压阻一致性好,无高压旁路效应,响应时间低于30ns,验证了薄膜锰铜传感器高压测试的准确性和可靠性。Manganin thin film transducer array aimed at high-pressure measurement is prepared by thin film technique. In this article, the preparation and principle of the transducers are introduced. Under dynamic loading, the film array shows good consistency for piezoresistance coefficient and fast reponse of less than 30ns. No high-pressure induced shunt effect is present, which indicating the high accuracy and reliability of manganin thin film transducer arrays.

关 键 词：锰铜传感器 压阻系数 阵列式 薄膜 薄膜工艺 高压测试 传感器阵列 压力测量 制造工艺 工作原理 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TB43[自动化与计算机技术—控制科学与工程]