HgBa_2Ca_2Cu_3O_（8＋δ）超导体的临界温度T_c的最佳化及其增强  

ENHANCEMENT AND OPTIMIZATION OF CRITICAL TEMPERATURE Tc FOR THE HgBa_2Ca_2Cu_3O_(8+δ) SUPERCONDUCTORS

作　　者：邵惠民[1] 沈临江[1] 吴小山[1] 王世栋[1] 蔡永明[1] 姚希肾 

机构地区：[1]南京大学物理系,南京化工大学物理系,东南大学分析中心

出　　处：《低温物理学报》1996年第2期124-127,共4页Low Temperature Physical Letters

摘　　要：控制超导铜氧化合物的临界温度Ｔｃ，不仅具有深远的实用意义，而且对高Ｔｃ超导电性的机制的解释也是十分有价值的．因此，本文的目的是：研究进一步提高Ｔｃ记录的可能性；以及发展一些控制和最佳化Ｈｇ系超导体的Ｔｃ的技术与方法．文中最后还给出了：（Ｈｇ，Ｐｂ１２２３）超导化合物的Ｔｃ－ｐ相图、ＴｃＲ＝０＝１３５Ｋ、Ｔｃｄｉａ＝１４３Ｋ，以及最佳空穴浓度Ｐ０＝０．３０ｈｏｌｅ／ＣｕＯ２．AbstractTo control the superconductivity critical temperature Tc of superconducting cuprates is not only important for applications, butalso useful for providing possible explanations for the mechanism of high Tc superconductivity.Therefore the main purposes of this work was to investigate thepossibilitles to increase the record value for Tc and to developtechniques for controlling and optimizing Tc's of Hg basedsuperconductor. In the present work,we successfully obtained a TcR=0(zero-resistance temperature)=135K, Tcdia(diamagnetic onset temperature) =143 K, an optimum hole concentration po =0.30 and the Tc versus in-plane hole concentration p phase diagram, for the HgBa2Ca2Cu3O8+δ superconductors with substitution of Hg by Pb

关 键 词：最优化 TC Hg相 超导体 

分 类 号：TM263[一般工业技术—材料科学与工程] O511.1[电气工程—电工理论与新技术]