Field-effect Transistors Based on Single-wall Carbon Nanotubes Bundles  

作　　者：WANG Xiaofeng GUO Ao GUAN Lunhui SHI Zujin GU Zhennan FU Yunyi ZHANG Xing Huang Ru 

机构地区：[1]Department of Microelectronics, Peking University, Beijing 100871, China [2]Department of Chemistry, Peking University, Beijing 100871, China

出　　处：《Chinese Journal of Electronics》2005年第4期599-602,共4页电子学报（英文版）

基　　金：his work is supported by the National Natural Science Foundation of China （No.90207004） and the State Key Foundamental Research Project （No.2000036501）.

摘　　要：The electric transport properties of Singlewalled carbon nanotubes （SWNT） bundles array have been measured. We report the fabrications and performances of nanoscale Field-effect transistors （FET） based on SWNT bundles array. In addition to p-type FET, we present a new technique by which ambipolar FETs can be fabricated. The Ion/Ioff ratio of ambipolar FETs approaches ten to the 5th order of magnitude. The reasons for ambipolar character are also qualitatively discussed. Both p-type and ambipolar FETs exhibit hysteresis in their electrical characteristics.

关 键 词：Carbon nanotubes bundle Field-effect transistors AMBIPOLAR HYSTERESIS 

分 类 号：TN32[电子电信—物理电子学]