Dielectric Properties of Multilayered Ba0.5Sr0.5TiO3 Thin Films Deposited on ITO-Coated Corning 1737 Glass by rf Magnetron Sputtering  

作　　者：林明通 陈国荣 杨云霞 肖田 徐毅 楼均辉 陈晨曦 

机构地区：[1]Key Laboratory for Superfine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 [2]SVA Electron Co. Ltd., Shanghai 200081

出　　处：《Chinese Physics Letters》2005年第11期2947-2949,共3页中国物理快报（英文版）

摘　　要：A new stacking method via variation ofsubstrate temperature in rfmagnetron sputter is used to fabricate polycrystalline/polycrystalline Ba0.5Sr0.5TiO3 thin films with higher dielectric constant, higher breakdown strength and lower leakage current densities than those prepared by a conventionM deposition method. The improved figure of merit G （ε0εrEb） of the Ba0.5Sr0.5TiO3 thin films implies that they are a feasible insulation layer for thin film electroluminescent devices.A new stacking method via variation ofsubstrate temperature in rfmagnetron sputter is used to fabricate polycrystalline/polycrystalline Ba0.5Sr0.5TiO3 thin films with higher dielectric constant, higher breakdown strength and lower leakage current densities than those prepared by a conventionM deposition method. The improved figure of merit G （ε0εrEb） of the Ba0.5Sr0.5TiO3 thin films implies that they are a feasible insulation layer for thin film electroluminescent devices.

关 键 词：TUNABILITY DEVICES LAYER 

分 类 号：O484.4[理学—固体物理]