Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique  

作　　者：Raid A. Ismail Ibrahim Ramadhan Aseel Mustafa 

机构地区：[1]Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq [2]Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq

出　　处：《Chinese Physics Letters》2005年第11期2977-2979,共3页中国物理快报（英文版）

摘　　要：Cu2O thin films with （111） preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500℃ for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around （1：1 × 10^-5Ω^-1cm^-1） at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.Cu2O thin films with （111） preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500℃ for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around （1：1 × 10^-5Ω^-1cm^-1） at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.

关 键 词：SINGLE-CRYSTAL THIN-FILMS CUPROUS OXIDE 

分 类 号：O484.41[理学—固体物理]