SOI材料微结构的TEM分析  

TEM analysis for microstructure of SOI material

作　　者：沈仲汉[1] 周永宁[1] 张昕[1] 吴晓京[1] 张苗 叶斐 陈猛 王曦 林成鲁 

机构地区：[1]复旦大学材料科学系,上海200433 [2]上海新傲科技有限公司,上海201821

出　　处：《电子显微学报》2005年第5期453-459,共7页Journal of Chinese Electron Microscopy Society

基　　金：上海市科委资助项目(No.035211024)

摘　　要：SOI晶圆材料正在成为制备IC芯片的主要原材料。SOI材料的质量很大程度上取决于顶层硅及埋层的结构。利用TEM,系统地研究了3种实验条件下的SOI材料的微结构,对其顶层硅及埋层的厚度、厚度的均匀性进行了定量分析,对高剂量SIMOX样品中存在的硅岛密度进行了估算,并对顶层硅中的结构缺陷进行了观察分析。The SOI （Silicon on Insulator） wafer is becoming a leading raw material for fabricating IC chips. The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX （ Buried Oxide）. By using TEM, the microstructures of SOI wafers fabricated under different conditions were studied systematically, and the quantitative analysis about the thickness and uniformity of Top-Si and BOX was performed. The density of Si-island existing in the high dose SIMOX sample was estimated, and the structure defects in Top-Si were discussed in details.

关 键 词：SOI晶圆 TEM分析 微结构 硅岛 结构缺陷 

分 类 号：TN304[电子电信—物理电子学] O771[理学—晶体学]