InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation  

作　　者：CHEN Jie ZHAO Jie WANG Yong-chen HAN De-jun 

机构地区：[1]College of Phys. and Electron. Inform. Sci. , Tianjin Normal University, Tianjin 300074, CHN [2]The Key Lab. of Education Ministry on Radiation Beam and Materials Modification, Beijing Normal University, Beijing 100875, CHN

出　　处：《Semiconductor Photonics and Technology》2005年第4期217-220,共4页半导体光子学与技术（英文版）

基　　金：NationalNaturalScienceFoundationofChina(60276013);FoundationofKeyLaboratoryofEducationMinistryfromBeijingNormalUniversity

摘　　要：A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.A quantum well intermixing(QWI) investigation on double quantum well(DQW) structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing(RTA) was carried out by means of photoluminescence(PL). The ion implantation was performed at the energy of 120keV with the dose ranging from 1×10~11cm^-2 to 1×10~14cm^-2. The RTA was performed at the temperature of 700℃ for 30s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation(～1×10~11cm^-2) indicating that the implant vacancy distribution affects the QWI. When the ion dose is over ～1×10~12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.

关 键 词：Ion implantation l InGaAsP/InP DOuble quantum well（DQW） Quantum well intermixing 

分 类 号：TN256[电子电信—物理电子学]