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作 者:WANG Li DING Yu-cheng LU Bing-heng LI Han-song YAN Le QIU Zhi-hui LIU Hong-zhong YIN Lie
机构地区:[1]The State Key Lab of Manufactur. Syst. Eng., Xi'an Jiaotong University, Xi'an 710049, CHN
出 处:《Semiconductor Photonics and Technology》2005年第4期275-280,共6页半导体光子学与技术(英文版)
基 金:NationalNaturalScienceFoundationofChina(50275118);National863Hi-TechProgramofChina(2002AA420050);National973BasicScienceResearchProgramofChina(2003CB716203).
摘 要:A novel nano-scale alignment technique based on Moiré signal for room-temperature imprint lithography in the submicron realm is proposed. The Moiré signals generated by a pair of quadruple gratings on two templates respectively are optically projected onto a photodetector array, then the detected Moiré signals are used to estimate the alignment errors in x and y directions. The experiment result indicates that complex differential Moiré signal is sensitive to relative displacement of the pair of marks than each single Moiré signal, and the alignment resolutions obtained in x and y directions are ±20nm(3σ) and ±24nm(3σ). They can meet the requirement of alignment accuracy for submicron imprint lithography.A novel nano-scale alignment technique based on Moiré signal for room-temperature imprint lithography in the submicron realm is proposed. The Moiré signals generated by a pair of quadruple gratings on two templates respectively are optically projected onto a photodetector array, then the detected Moiré signals are used to estimate the alignment errors in x and y directions. The experiment result indicates that complex differential Moiré signal is sensitive to relative displacement of the pair of marks than each single Moiré signal, and the alignment resolutions obtained in x and y directions are ±20 nm(3σ) and ±24 nm(3σ). They can meet the requirement of alignment accuracy for submicron imprint lithography.
关 键 词:Imprint lithography GRATING Nano-scale alignment Moiré signal
分 类 号:TN305.7[电子电信—物理电子学]
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