碲化镉纳米线的制备和生长机理分析  

Growth of CdTe Nanowires and Analyse of Growth Mechanism

作　　者：姜海涛[1] 郑毓峰[1] 简基康[2] 孙言飞[1] 陈艳华[1] 

机构地区：[1]新疆大学物理系材料实验室,乌鲁木齐830046 [2]北京航天航空大学理学院凝聚态物理中心,北京100083

出　　处：《新疆大学学报（自然科学版）》2005年第4期425-429,共5页Journal of Xinjiang University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(50062002)

摘　　要：利用物理气相沉积方法,在S i衬底上制备了CdT e纳米线和纳米晶.X射线衍射(XRD)和扫描电子显微镜(SEM)研究表明所得产物为四方结构CdT e.CdT e纳米线的直径约20nm,长度约为几个微米,纳米晶粒径约为100 nm.分析了载流气体流速、温度等因素对过饱和度的影响,进而影响低维纳米材料的形貌结构.CdTe nanowires and nanocrystals were grown on the silicon substrates via physical vapor deposition. X-ray diffraction and scanning electron microscopy images show that the final products were tetragonal CdTe nanowires,which were about 20nm in diameter and up to several micrometers in length. The CdTe nanocrystals were about 100nm. We investigate the influence of substrate temperature and the flow rate of Ar on the degree of the super saturation,which affect the prevailing growth morphology of the low-dimension nanomaterial.

关 键 词：物理气相沉积(PVD) CDTE 纳米线 纳米晶 生长机理 

分 类 号：TN304.2[电子电信—物理电子学]