硅基CoZrO铁氧体磁膜结构RF集成微电感  

A RF Integrated Inductor with CoZrO Ferrite Thin Film

作　　者：杨晨[1] 刘锋[2] 任天令[1] 刘理天[1] 冯海刚 王自惠 龙海波[4] 于军[2] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]华中科技大学电子科学与技术系,武汉430000 [3]伊利诺理工学院电气与计算机工程系 [4]清华大学电子工程系,北京100084

出　　处：《Journal of Semiconductors》2005年第11期2208-2212,共5页半导体学报（英文版）

基　　金：美国自然科学基金资助项目(批准号:0302449)~~

摘　　要：制作了一种新型磁膜结构射频集成微电感.该电感使用溶胶-凝胶法制备的CoZrO铁氧体作为磁性薄膜;采用平面单匝形式的金属线圈,从而形成“SiO2绝缘层/磁膜层(CoZrO)/SiO2绝缘层/Cu线圈”的结构,具有结构简单、制作工艺与常规集成工艺兼容等特点.同时,采用相同工艺同批制作了无磁膜微电感作为对比样品,并取各项结构参数与磁膜电感相一致.测试结果表明,2GHz处,磁膜结构微电感的感值(L)为1·75nH、品质因数(Q)为18·5,与无磁膜微电感相比,L和Q的值分别提高了25%和23%.A novel RF integrated inductor with ferrite thin-film is fabricated. The inductor has a simple structure of “SiO2 insulating layer/magnetic thin-film（CoZrO）/SiO2 insulating layer/Cu coils”, in which a planar single-turn metal coil and a CoZrO ferrite thin-film fabricated by the Sol-Gel method are used. The fabrication process is compatible with standard integrated process. Inductors without the magnetic thin-film are fabricated as the referential sample using the same processes,in which the structure parameters are consistent with the inductor with magnetic thin-film. The inductance（L） of the inductor with magnetic thin-film is 1.75nH and the quality factor（Q） is 18. 5 at 2GHz. Compared with the inductor without magnetic thin-film,L and Q are raised by 25 % and 23 %, respectively.

关 键 词：CoZrO铁氧体 磁膜结构 射频集成 

分 类 号：TN304.055[电子电信—物理电子学]