氮离子注入法合成CN_x膜的化学键表征  

Chemical Bond Characterization of CN_x Films Synthesized by Nitrogen Ion Implantation

作　　者：曹培江[1] 朱德亮[1] 马晓翠[1] 潘跃武[2] 

机构地区：[1]深圳大学理学院深圳市特种功能材料重点实验室,深圳518060 [2]哈尔滨工业大学深圳研究生院材料科学与工程学科部,深圳518055

出　　处：《真空科学与技术学报》2005年第5期328-330,354,共4页Chinese Journal of Vacuum Science and Technology

基　　金：广东省自然科学基金项目(No.04300875)

摘　　要：采用N离子注入金刚石膜和热解石墨方法合成了CNx膜,用Raman光谱和XPS谱对合成薄膜中C、N的化学键合状态进行了研究。通过与Raman光谱的比较,我们对合成样品XPS谱中N1s的化学键合状态作出如下归属:≈400.0 eV属于sp2C-N键;≈398.5 eV则属于sp3C-N键。结果显示:碳原子、氮原子间的化学键合状态,明显地依赖于衬底材料及注入N离子的能量。CNx thin films were synthesized by nitrogen ions implantation into diamond films and graphite, and the chemical bonding states of C and N have been studied by Raman spectroscopy and X-my photoelectron spectroscopy （XPS） .By comparison with the Raman spectra,the assignments of Nls binding states in XPS for all samples are made,in which the peak at ≈400.0 eV is attributed to C-N sp^2 bond,while the peak at ≈398,5 eV is ascribed to C-N sp^3 bond. It can be seen clearly that the chemical states between C and N atoms depend on the type of substrate and the nitrogen ion implantation energy.

关 键 词：N离子注入 金刚石 化学键 

分 类 号：O484.5[理学—固体物理]