CeF_3掺杂增强纳米晶Si光致发光强度的研究  

Photoluminescence Enhancement of Si Nanocrystals by CeF_3 Doping

作　　者：方应翠[1] 解志强[2] 赵有源[2] 章壮健[3] 陆明[2] 

机构地区：[1]合肥工业大学机械与汽车工程学院真空教研室,合肥230009 [2]复旦大学光科学与工程系,上海200433 [3]复旦大学材料系,上海200433

出　　处：《真空科学与技术学报》2005年第5期335-338,366,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.10374016);复旦大学研究生创新基金

摘　　要：真空蒸发SiO粉末,在Si(100)基体上制备SiOx薄膜,后续氮气中1100℃退火制备镶嵌在SiO2基体中的纳米晶Si体系(nc-Si/SiO2),然后将该样品放入真空室,在其上沉积CeF3薄膜,不同温度下热处理使Ce3+扩散到nc-Si附近,实现对纳米晶Si的掺杂。通过改变CeF3薄膜厚度调节掺杂浓度,在一定的掺杂浓度下纳米晶Si的光致发光强度明显改善,激发光谱证实荧光增强机制是Ce3+通过强耦合过程对纳米晶Si的能量传递。nc-Si/SiO2 system was fabricated by evaporating SiO powder onto Si（100） substrate to form SiOx thin film,followed by 1100 ℃ high temperature annealing in nitrogen atmosphere. Ce^3＋ was doped into ne-Si enbedded in SiO2 matrix by evaporation of CeF3 powder onto the surface of nc-Si/SiO2 and followed by annealing in nitrogen atmosphere at different temperatures. Photoluminescence （PL） properties of the doped samples were studied. We found that the PL intensity of nc-Si enhances remarkably at optimized doping concenwation. Photoluminescence excitation （PLE） spectra of the doped and undoped nc-Si/SiO2 show that the enhancement results from the energy transfer from Ce^3＋ to nc-Si by strong coupling between them.

关 键 词：nc-Si/SiO2 光致发光 CeF3掺杂 能量传递 

分 类 号：O484.41[理学—固体物理] O472.3[理学—物理]