光致变色材料多阶光存储模型与实验  

Model of multi-level optical storage with photochromic materials and experiments

作　　者：雷志军[1] 徐端颐[1] 齐国生[1] 佘鹏[1] 胡恒[1] 胡华[1] 

机构地区：[1]清华大学精密仪器系光盘国家工程研究中心,北京100084

出　　处：《光学技术》2005年第6期833-835,838,共4页Optical Technique

基　　金：国家重点基础研究发展规划资助项目(973项目)(G19990330)

摘　　要：光致变色材料具有光子型反应的特点,控制光致变色材料吸收的光子数就可以控制材料的反应程度,从而实现多阶存储。根据光化学反应的原理,分析了光致变色材料的写入过程,建立了光致变色多阶存储写入过程的反射率模型。根据该模型的仿真计算结果,设定了一组合适的曝光量,在1,2_双(2_甲基_5_(4_(1,3_二氧戊环基)苯基)噻吩_3_基)全氟环戊烯材料上实现了8阶存储。Photochromic materials have the photon-reaction feature. If the number of photons absorbed by the material is controlled, the reaction degree of the material is controlled. Thus the multi-level storage was realized. The write process of photochromic materials was analyzed, and a model was built based on the photochemistry principles. Following the simulation resuits of the model, a set of exposure energy values are used on 1, 2-bis （2-methyl-5-（4-（1,3 -dioxacyclohex） benzene） thiophen-3-yl） perfluorocyclopentene material. And 8 level storage is realized.

关 键 词：高密度光存储 多阶存储 光致变色 

分 类 号：TP333.41[自动化与计算机技术—计算机系统结构]