低噪声CMOS电荷灵敏前放的ASIC设计  

Design of low noise CMOS charge sensitive amplifier ASIC

作　　者：邓智[1] 程建平[1] 刘以农[1] 康克军[1] 

机构地区：[1]清华大学工程物理系,北京100084

出　　处：《核电子学与探测技术》2005年第6期678-681,共4页Nuclear Electronics & Detection Technology

摘　　要：当前辐射探测应用对前端电子学的集成度要求越来越高,如何实现高密度、低成本和一定性能以及可靠的核电子学成为重要的课题。CMOSASIC可以实现低成本和用户定制,成为核电子学专用集成电路的主要工艺。采用无锡华润0.6μmCMOS工艺完成了低噪声CMOS电荷灵敏前放的第一次原型设计。The number of channel of front-end electronics has been increasing rapidly in recent applications of radiation detection, requiring more and more integrated circuit. How to implement nuclear elec- tronics with high-density, low-cost and high performance and reliability has become a critical issue. Due to its low cost and capability for custom design, CMOS ASIC technology is being the working horse for monolithic nuclear electronics. In this paper, we have designed low noise CMOS charge sensitive amplifiers for first run prototyping using CSMC 0. 6μm CMOS process.

关 键 词：低噪声 CMOS电荷灵敏放大器 专用集成电路 

分 类 号：TN4[电子电信—微电子学与固体电子学] TL8[核科学技术—核技术及应用]