纳米结构TiO_2/聚3-己基噻吩多孔膜电极光电性能研究  

A Photoelectrochemical Study of the Nanostructured TiO_2 /P3HT Film Electrode

作　　者：郝彦忠[1] 蔡春立[2] 

机构地区：[1]河北科技大学理学院 [2]河北科技大学化学与制药工程学院,石家庄050018

出　　处：《物理化学学报》2005年第12期1395-1398,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(20203008);河北省自然科学基金(202351);河北省教育厅博士基金(110611)资助项目~~

摘　　要：用光电流作用谱、光电流-电势图等光电化学方法研究了ITO/聚3-己基噻吩(ITO/P3HT)膜和纳米结构TiO2/聚3-己基噻吩(TiO2/P3HT)复合膜的光电转换性质.结果表明,P3HT膜的禁带宽度为1.89eV,价带位置为-5.4eV.在ITO/TiO2/P3HT复合膜电极中存在p-n异质结,在一定条件下异质结的存在有利于光生电子-空穴对的分离.P3HT修饰ITO/TiO2电极可使光电流发生明显的红移,从而提高了宽禁带半导体的光电转换效率.The photon-current conversion properties of ITO/poly（3-hexylthiophene） OTO/P3HT） and nanostructured TiO2/P3HT film electrode were studied by using the photocurrent action spectra, the photocurrent dependence of potential and UV-Vis absorption spectra. The bandgap of P3HT film is 1.89 eV. The diagram of energy level of P3HT film was determined with cyclic voltammetry and photoelectrochemical method. The conduction band of P3HT film is -5.4 eV. The nanostructured TiO2/P3HT electrode can enlarge the visible optical absorption region and obviously increase the photocurrent in visible region. The p-n heterojunction exists in the TiO2/P3HT nanostructured electrode which favors the separation of electron/hole pairs. Thus, the photon-electron conversion efficiency could be improved.

关 键 词：纳米结构TiO2/P3HT电极 光电化学 聚3-己基噻吩 

分 类 号：O646.5[理学—物理化学]