不同氮源制备CN_x纳米管薄膜及其低场致电子发射性能  

Fabrication of CN_x nanotubes films using different nitrogen sources and their low field emission properties

作　　者：丁佩[1,2] 晁明举[2] 梁二军[2] 郭新勇[3] 

机构地区：[1]郑州航空工业管理学院应用科学系,郑州450015 [2]郑州大学物理工程学院,材料物理教育部重点实验室,郑州450052 [3]河南大学特种功能材料实验室,开封475001

出　　处：《物理学报》2005年第12期5926-5930,共5页Acta Physica Sinica

基　　金：河南省高校创新人才基金(批准号:1999-125);郑州航空工业管理学院青年科研基金(批准号:Q01G019)资助的课题.~~

摘　　要：采用高温热解法,分别以氯化铵(NH4Cl)和乙二胺(C2H8N2)为氮源在洁净的硅片上沉积生长CNx纳米管薄膜.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行形貌观察和表征.结果显示不同氮源制备出的CNx纳米管薄膜的洁净度、有序度以及纳米管的结构明显不同.热解乙二胺(C2H8N2)/二茂铁(C10H10Fe)制备出的结晶度较低的“竹节状”结构CNx纳米管平行基底表面有序生长,而且低场致电子发射性能优越,开启电场1.0V/μm,外加电场达到2.89V/μm时发射电流密度为860μA/cm2.The CNx nanotube films have been fabricated on Si substrates by thermal decomposition when NH4Cl and C2H8N2 were used as nitrogen sources. The scanning electron microscopy, transmission electron microscopy and Raman spectroscopy were used to characterize the CNx nanotubes. It is found that not only the degrees of purity and ordering, but also the morphology of the CNx nanotubes are quite different when different nitrogen sources are used. The CNx nanotubes fabricated by pyrolyzing C2H8N2/C10H10Fe have “bamboo-like” structure and lower crystallinity, and grow horizontally in good order on silicon substrates. Low field emission measurement gives a turn-on field of 1.0 V/μm and 860μA/cm^2 current density at 2.89 V/μm.

关 键 词：CNX纳米管 高温热解 “竹节状”结构 场致发射 

分 类 号：O484[理学—固体物理]