用ECRC-VD方法制备非晶氟化碳薄膜  

Fluorinated Amorphous Carbon Films Prepared by ECR-CVD

作　　者：蒋昱[1] 吴振宇[1] 苏祥林[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《微纳电子技术》2005年第12期554-557,共4页Micronanoelectronic Technology

基　　金：电子元器件可靠性物理及其应用技术国家级重点实验室项目(51433020205DZ01)

摘　　要：以C4F8为源气体,Ar为稀释气体,用电子回旋共振化学汽相淀积的方法制作了非晶氟化碳薄膜;使用XPS和FTIR分析薄膜的化学组分和成键类型;研究了微波功率对于沉积速率和薄膜光学性质的影响。沉积速率随Ar在混合气体中比例的增大先增大后降低,随微波功率的增加而增加,并最终趋于饱和值。沉积的薄膜介电常数约为2.0,在可见光区薄膜具有良好的透光性。在较高的微波功率条件下,沉积薄膜的光学带隙减小。Fluorinated amorphous carbon thin films were prepared by depositing in an electron cyclotron resonance chemical vapor deposition system using C4F8 as the source gas and Ar as the carrier gas. The chemical compositions were analyzed using XPS and FTIR techniques. The effects of applied microwave power on the deposition rate, the optical and thermal properties of the films were studied. The deposition rate increases at the beginning and then decreases with the increasing Ar to C4F8 gas flow ratio, and with the increasing microwave power, finally it exceeded saturation. The as-deposited film shows a dielectric constant as low as 2.0 and has high transparency in the visible light range. At higher microwave power, the optical energy gap decreases.

关 键 词：电子回旋共振 非晶氟化碳 低k 

分 类 号：O484.4[理学—固体物理]