YBCO双外延结的X射线φ扫描分析  

Study on the Bi-epitaxial Grain Boundary Junctions in YBa_2Cu_3O_7 by X-ray Diffraction

作　　者：常世安[1] 陈岚峰[1] 马平[1] 杨坚[1] 古宏伟[1] 郝建民[1] 袁冠森[1] 

机构地区：[1]北京有色金属研究总院,电子工业部46所

出　　处：《中国稀土学报》1996年第2期166-169,共4页Journal of the Chinese Society of Rare Earths

摘　　要：用射频磁控溅射法在（１００）ＳｒＴｉｏ３单晶衬底上外延生长ＭｇＯ导引层，光刻刻蚀去一半后沉积生长ＣｅＯ２外延膜，再直流溅射外延生长ＹＢＣＯ超导膜，得到了４５°转向结。用Ｘ射线θ－２θ扫描和φ扫描研究了各外延膜的结构和取向。We have succeeded in fabricating bi-epitaxial 45°grain boundaries in YBCO on multi-layer materials. In the materials, SrTiO3, MgO and CeO2 are served as base layer, seed layer and buffer layer respectively. We managed to mask the MgO and remove it from half of the substrate by chemical wet etching.The epitaxial retation between these materials in the growth planc are CeO2(110)//SrTiO3 (100) and CeO2 (100)//MgO(100)//SrTiO3 (100), invested by X-ray φ scan.The current-voltage characteristic of the Bi-epitaxial grain boundary junctions exhibits resistibly shunted josephson behavior.

关 键 词：YBCO 双外延结 Φ扫描 超导体 薄膜 高TC 

分 类 号：TM262[一般工业技术—材料科学与工程]