γ－辐照聚（2，6－萘二甲酸乙二酯）的正电子湮没寿命谱及热释电研究  

STUDIES OF γ-IRRADIATED POLY (ETHYL NAPHTHALATE)WITH POSITRON ANNIHILATION LIFETIME SPECTRUM ANDTHERMAL STIMULATED CURRENT

作　　者：吕素平[1] 许海燕[1] 漆宗能[1] 王淑英[1] 

机构地区：[1]中国科学院化学研究所工程塑料国家重点实验室,中国科学院高能物理研究所应用部,北京化工大学

出　　处：《高分子材料科学与工程》1996年第4期87-91,共5页Polymer Materials Science & Engineering

基　　金：中国科学院核分析技术联合开放实验室与国家自然科学基金

摘　　要：用正电子湮没寿命谱（ＰＡＬＳ）及热释电（ＴＳＣ）方法相结合研究了γ－辐照聚（２，６萘二甲酸乙二酯）（ＰＥＮ）。由ＰＡＬＳ测得随辐照剂量的增加，ＰＥＮ中自由体积减少，这说明分子链堆砌紧密，分子间距离减少。而ＴＳＣ的结果表明，ＰＥＮ中载流子陷阱深度变浅，空穴注入数量增加。这两种实验结果说明分子间距离减小降低了导带的能级，从而使陷阱变浅，空穴注入增加。另外，γ辐照产生的交联与降解引起ＰＥＮ中可运动分子链段数量的变化与ＴＳＣ中初始载流子浓度有很好的相关性，说明热运动引起分子链间距离的变化有利于载流子的链间跃迁。The free volume, the electric conductivity and their relationship of poly (ethyl naphthalate)(PEN) have been studied by use of the Positron Annihilation Lifetime Spectrum (PALS) and the Thermal Stimulated Current (TSC). The PALS measurements show that the γ-irradiation causes the free volume of PEN, and also the distance between the molecules,to decreases.Whilst the TSC measurements show that the γ-irradiation cause the energy difference between the carrier trap and the conductive band bottom (depth of the carrier trap)of PEN to reduce, and also, the number of the void carriers to increase. It is deduced that the decrease of the molecular distance could lower the energy level of the conductive band bottom of PEN, and therefore, reduce the depth of carrier trap and increase the number of the void carriers of the PEN.

关 键 词：PALS 热释电 电学性能 γ辐照 PEN 

分 类 号：O633.14[理学—高分子化学]