Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells  

作　　者：GUO Zi-zheng LIANG Xi-xia BAN Shi-liang 

机构地区：[1]Department of Physics, Inner Mongolia University, Hohhot 010021, P. R. China [2]Department of Physics, Inner Mongolia Normal University, Hohhot 010022, P. R. Chine

出　　处：《Optoelectronics Letters》2005年第3期164-167,共4页光电子快报（英文版）

基　　金：Foundationitem:Project supported by the National Natural Sci-ence Foundation of China(60166002)

摘　　要：A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnOdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature-dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing.

关 键 词：半导体技术 温度控制 激光器件 激子转换 

分 类 号：TN365[电子电信—物理电子学]