以LiF修饰阴极的有机电致发光器件性能的提高(英文)  

Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs

作　　者：黄永辉[1] 李宏建[1] 代国章[1] 谢强[1] 潘艳芝[1] 戴小玉[1] 

机构地区：[1]湖南大学应用物理系,湖南长沙410082

出　　处：《发光学报》2005年第6期737-742,共6页Chinese Journal of Luminescence

基　　金：湖南省杰出青年基金(03JJY1008);中国博士后科学基金(2004035083);中南大学科学基金(0601059)资助项目

摘　　要：提出了用一种无机半导体的模型来计算有机电致发光器件(OELDs)的J-V特性.通过在金属/有机物界面插入薄LiF层,由此引入的偶极子能极大地降低了电子的注入势垒和OELDs的开启电压.从而,载流子的注入得到了平衡,OELDs的性能得到了较大提高.经过数值计算,发现LiF插入层有一个约为1.5～5.0 nm的最优厚度.LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能.结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高.A model for inorganic semiconductor has been presented to calculate the J-V characteristics of organic electroluminescent devices （OELDs）. The additional dipole energy introduced by inserting a thin LiF layer at metal/ organic interface significantly decreases the potential barrier for electrons injection and the turn-on voltage of OELD. The charge carriers＇ injection has been balanced, and then the performance of OELD has been greatly enhanced. By detailed numerical calculation, it has been found that the optimal thickness of inserted LiF should be in the range of 1.5 - 5.0 nm, too thick or too thin LiF will increase the turn-on voltage of OELD and degrade its performance. It has been proved that this model is proper to explain the performance enhancement of OELDs via modification of electrode with LiF.

关 键 词：有机电致发光器件 电极修饰 界面偶极子 

分 类 号：TN383.1[电子电信—物理电子学] TN873.3