隧道再生结构的垂直腔面发射激光器激射特性研究  

Study on the Lasing Characteristics of Tunnel-junction-regenerated VCSEL

作　　者：渠红伟[1] 郭霞[1] 邓军[1] 董立闽[1] 廉鹏[1] 邹德恕[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院

出　　处：《固体电子学研究与进展》2005年第4期499-502,530,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(批准号:60276033和批准号69889601);国家"863"高技术计划资助项目(批准号:2002AA312070);国家"973"计划资助项目(批准号:G20000683-02);北京市自然科学基金资助项目(批准号:4021001)

摘　　要：对隧道再生多有源区内腔接触式垂直腔面发射激光器(VCSEL)材料特性进行了实验研究,得到了VCSEL外延片量子阱增益谱峰值波长、谐振腔谐振波长、DBR反射谱中心波长及材料的生长厚度偏差等重要信息。如果谐振腔谐振波长比增益谱峰值波长长20nm以上,阈值条件很难得到满足,器件很难实现激射。符合模拟参数生长的双有源区隧道再生VCSEL实现了室温激射。氧化孔径8.3μm器件,在11mA注入电流下,获得5mW的输出功率,斜率效率0.702mW/mA,激射波长970nm。The material characteristics of tunnel-junction-regenerated multiple active regions intracavity-contacted Vertical Cavity Surface Emitting Lase have been investigated. The gain peak wavelength, the resonance cavity wavelength, the center wavelength of Distributed Bragg Reflector（DBR） and the thickness deviation of VCSEL were obtained. If the cavity resonance wavelength was above 20 nm longer than the gain peak wavelength, threshold condition couldn＇t be satisfied, so VCSEL couldn＇t lase. Tunnel-junction-regenerated two active regions VCSEL lased under room temperature, which was agreed with the analyzed grown parameter. Light output power of 5 mW was obtained at 11 mA for the 8.3 μm oxide aperture, slope efficiency was 0. 702 mW/mA,and the emission wavelength was 970 nm.

关 键 词：垂直腔面发射激光器 隧道再生 边发射 增益谱 

分 类 号：TN248.4[电子电信—物理电子学]