CMOS带隙电压基准的误差及其改进  

Error Sources of CMOS Bandgap Reference and Their Improvement

作　　者：陈浩琼[1] 高清运[1] 秦世才[1] 

机构地区：[1]南开大学微电子系,天津300071

出　　处：《固体电子学研究与进展》2005年第4期531-535,共5页Research & Progress of SSE

基　　金：天津科技攻关重点项目(编号:033187111);南开大学与天津中晶微电子公司合作项目的资助

摘　　要：分析了CMOS带隙基准电压值的误差,给出了定量的数学表达式和相应的改进方法。在此理论指导下,用0.25μmCMOS工艺设计了一个带隙基准源,并制出芯片。基准电压的设计值为1.2V,实测结果表明,在不使用修正技术的情况下,基准电压值的均方差达3mV,温度系数(从-40°C～100°C)为20ppm/°C,电源抑制比(从2～3.3V)80μV/V,验证了理论分析的正确性。This paper analyses all the error sources in bandgap voltage reference and presents precise mathematical expression and the corresponding improvment method. According to the analysis, a new bandgap voltage reference based on 0. 25 μm CMOS technology is designed and fabricated. The design value is 1.2 V. Testing shows that the standard deviation of the reference voltage is 3 mV, the temperature coefficient is 20 ppm/℃ over --40-100℃ and the supply rejection ratio is 80 μV/V for 2 V to 3.3 V supply. These results prove the theory.

关 键 词：互补金属氯化物半导体 带隙基准 误差源 均方差 

分 类 号：TN432[电子电信—微电子学与固体电子学]