大直径CZ-Si单晶中空洞型缺陷的研究进展  

Progress of Study on Void-type Defects in Large Diameter CZ-Si Crystals

作　　者：乔治[1] 刘彩池[2] 史严[1] 张彦立[1] 

机构地区：[1]石家庄铁道学院数理系,河北石家庄050043 [2]河北工业大学信息功能材料研究所,天津300130

出　　处：《河北工业大学学报》2005年第6期43-46,共4页Journal of Hebei University of Technology

摘　　要：概要介绍了近年来国内外对大直径CZ-Si单晶中空洞型缺陷的研究进展,详细阐述了COPs、LSTDs和FPDs3种空洞型原生缺陷的基本性质、形成过程以及3种消除空洞型缺陷的方法.研究表明,利用高温快速退火(RTA)消除空洞型原生缺陷,是一种简单而有效的方法.Recent research progress in void-type defects in large diameter CZ-Si crystals is reviewed in this paper. The properties and the formation mechanism of void-type defects such as COPs, LSTDs and FPDs are discussed. Furthermore, three controlling methods for defects are also discussed in detail in this paper, Research indicates that RTA is a simple and effective method to eliminate the void-type defects.

关 键 词：集成电路 CZ-Si单晶 大直径 空洞型原生缺陷 快速退火 

分 类 号：TN305[电子电信—物理电子学]