N-E模型描写的弱锚定边界条件下的Freedericksz转变  

Freedericksz Transition with Weak Anchoring Represented by N-E Model

作　　者：孙宗利[1] 张志东[1] 魏怀鹏[1] 

机构地区：[1]河北工业大学理学院,天津300130

出　　处：《液晶与显示》2005年第6期488-492,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：河北省高校重点学科建设项目资助

摘　　要：N-E模型具有两个参数用于描写液晶在基板上的锚定能。采用该模型研究了弱锚定条件下的Freedericksz转变。通过变分理论得到指向矢满足的微分方程和边界条件,得到了阈值磁场和饱和磁场分别满足的方程。理论结果与R-P模型进行了比较。通过阈值磁场和饱和磁场可以确定N-E模型中的两个参数。基于微分方程和边界条件对液晶盒中的指向矢分布进行了计算。数值结果验证了阈值磁场和饱和磁场满足解析方程的正确性。得到结论:N-E模型是描写液晶在基板上弱锚定的候选模型。N-E model with two parameters is used to represent the anchoring energy of liquid crystals on substrates. Using this model, Freedericksz transition with weak anchoring differential equation for the director and the boun tion theory. Analytical equation for the threshold The theoretical results are compared with those o determined by the threshold field and the saturat dary conditions are obtain field and saturation field condition is ed by means are gained, f R-P model. Two parameters in N-E ion field. The distribu crystal cell is also calculated based upon the differential equation and rical results verified the analytic equation satisfied by the threshold fie eluded that N-E model is a candidate for representing the anchoring substrates. studied. The of the variarespec model tion of the director in boundary conditions. tively. can be liquid Numeld and saturation field. It is conenergy of liquid crystals on the

关 键 词：液晶 锚定能 N-E模型 阈值磁场 饱和磁场 

分 类 号：O753.2[理学—晶体学]