退火处理对ITO表面特性及有机发光器件性能的影响  

Influence of Annealing Treatment on ITO Surface and OLED Performances

作　　者：仲飞[1] 刘彭义[1] 段光凤[1] 

机构地区：[1]暨南大学物理系,广东广州510632

出　　处：《液晶与显示》2005年第6期498-502,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：广东省自然科学基金资助项目(No.021169)

摘　　要：为了改善有机发光器件(OLEDs)的性能,在0～600 ℃不同温度下对ITO透明导电玻璃进行了退火处理.SEM观察到随退火温度的升高,ITO表面粗糙度增加;四探针电阻测试结果显示,在300 ℃以上温度退火后ITO表面电阻率有明显增加.用退火前后的ITO玻璃作为阳极制备了OLEDs,器件结构为ITO/TPD/Alq3/Al,比较器件的电流密度-电压特性曲线测试结果表明,ITO薄膜的热处理温度对OLEDs性能有显著的影响.The characteristics of indium tin oxide （ITO） films deposited on glass substrates were investigated by thermal annealing at different temperature in the range from 0 ℃ to 600℃ to improve their quality for use in organic light-emitting diodes （OLEDs）. The morphology of the ITO films surface was significantly changed by the treatment as observed by scanning electron microscopy （SEM）. At higher temperatures （〉300℃）, the shift resistance obviously increases with increasing of annealing temperature. The electrical and optical characteristics of OLEDs with the structure of ITO/TPD/ Alq3/A1, prepared on pre-treated and untreated ITO substrates, were determined and compared. The results show that the performances of OLEDs are influenced remarkably by ITO substrates annealed at different temperature.

关 键 词：ITO 有机发光器件 退火 表面处理 性能 

分 类 号：TN873.3[电子电信—信息与通信工程]