Li掺杂熔融织构YBCO晶体的面内磁阻(英文)  

THE IN-PLANE MAGNETORESISTIVITY FOR LI-DOPED MTG-YBCO CRYSTALS

作　　者：聂阳[1] 王智河[1] 白忠[1] 李配军[1] 邱里[1] 丁世英[1] 张宏[2] 

机构地区：[1]南京大学物理系固体微结构国家重点实验室,南京210093 [2]中科院上海微系统与信息技术研究所,上海200050

出　　处：《低温物理学报》2005年第A01期596-600,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:10174033);国家超导973项目资助的课题~~

摘　　要：在0 ~9T范围内测量了磁场平行于c-轴时Li掺杂熔融织构YBCO样品面内电阻的温度关系.我们用A^H模型拟合实验数据.结果表明,以R/ Rn=20 %作为高阻区和低阻区的分界线,R^T曲线可分别用R = Rn{I0[ CH-p(1-t)q]}-2来描述,其中Rn是正常态的电阻Rn=-5.36+0.145T.p=0 .78 ,1 .88和q=1 .5 ,3 .5分别是高阻区和低阻区的拟合参数.We have measured the temperature dependence of in-plane resistivity for Li-doped MTG-YBCO crystals in the magnetic field up to 9T parallel to c-axis. The R-T curves are fitted piecewise in two parts based on A-H model, R=Rn[I0[γ0/2）]^-2, where Rn is the normal state resistivity. γ0 = U0/KaT, and I0 is the modified Bessel function. R=Rn{I0[CH^-p（1-t）^q]}^-2 is achieved with Rn=-5.36＋0.145T, p=0.78,1.88 and q=1.5,3.5 for high- and low-resistivity region, respectively.

关 键 词：高温超导体 传输性质 

分 类 号：O511.4[理学—低温物理]