高温超导薄膜生长机理初探  

GROWTH MECHANISM OF TL-2212 HIGH TEMPERATURE SUPERCONDUCTING FILMS

作　　者：赵新杰[1] 季鲁[1] 陈恩[1] 左涛[1] 周铁戈[1] 陈思[1] 阎少林[1] 方兰[1] 左旭[1] 

机构地区：[1]南开大学电子科学系,天津300071

出　　处：《低温物理学报》2005年第A01期629-634,共6页Low Temperature Physical Letters

基　　金：科技部"863"计划(项目编号:863-2002AA30614)资助的课题

摘　　要：在3×10×0．5mm^3的LaAlO3（001）基片上，利用直流磁控溅射生长一层厚度约为700nm的非晶态Tl2Ba2CaCu2Ox先驱薄膜．将先驱薄膜与热处理过的Tl2Ba2Ca2CuOy块材（作为Tl源）一起在720-860℃温度下退火．为了研究薄膜的初期成核情况，退火时间一般为5分钟．利用XRD和完全抗磁性测试方法对样品的成相情况进行研究，结果显示，在薄膜生长的初期，较高的退火温度可以获得较大尺寸的初期生长核，但是退火温度达到860℃时，初期成核的晶粒尺寸变小．The Tl2Ba2CaCu2Ox precursor films, which thickness is about 700nm, were deposited on LaAlO3（001）（3×10×0.5mm^3） substrate by DC magnetic sputtering. These precursor films were annealed with an pre-reacted Tl-Ba-CaCu-O pellet in latm pure argon at temperature of 720～860℃. In order to understand nucleation of films, the annealing time is 5 minutes. The nucleation were explored by X-ray diffraction （XRD） θ～2θ scans from Cu-Karadiation and measuring AC magnetic induction. This was suggested that the higher is the annealing time, the larger is the dimension of nuclear of Tl-2212 phase. The other way round, the annealing temperature was 860℃, the dimension of nuclear is very small.

关 键 词：Tl—2212 高温超导薄膜 生长机理 热处理 

分 类 号：O511.3[一般工业技术—材料科学与工程]