本征Josephson单结的电流-电压特性  

VOLTAGE-CURRENT CHARACTERISTICS OF INTRINSIC JOSEPHSON SINGLE JUNCTION

作　　者：王智河[1] 聂阳[1] 白忠[1] 李配军[1] 邱里[1] 丁世英[1] 

机构地区：[1]南京大学物理系固体微结构国家重点实验室,南京210093

出　　处：《低温物理学报》2005年第A01期706-710,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:10174033);国家科技部(G1999-0646);南京大学预研基金资助的课题~~

摘　　要：采用光刻蚀和Ar离子刻蚀技术成功地在Bi-2212单晶表面制备出台阶型本征Joseph-son单个结,并在5~65K范围内用四引线法测量了该结零场下的I^V特征曲线.结果表明,临界电流几乎保持不变,但返回电流随温度增加而增大;与此同时,Mccumber参数βc随着温度增加而减小.临界温度附近,跳跃电压ΔV明显偏离BCS理论.A mesa with intrinsic Josephson single junction has been fabricated successfully on the surface of Bi1.9Pb0.1Sr2CaCu2O8＋x single crystals by photolithgraphy and ion-beam etching technique. The isothermal Ⅰ～Ⅴ curve in 0T was measured by four-probe method from 5 to 65K. The results show that the critical current of junction is independent of temperature, but the return current increases with the increasing temperature. The jumping voltage △V and Mccumber parameter βc decrease with the increasing temperature. The jumping voltage △V deviates the BCS theory near Tc.

关 键 词：高温超导体 本征结 

分 类 号：O511.2[理学—低温物理]