在RABiTS基带上制备Tl-2212超导薄膜  

PREPARATION AND CHARACTERIZATION OF Tl_2Ba_2CaCu_2O_8 THIN FILMS ON RABiTS

作　　者：季鲁[1] 阎少林[1] 赵新杰[1] 方兰[1] 李永刚[1] 何明[1] 

机构地区：[1]南开大学电子科学系,天津300071

出　　处：《低温物理学报》2005年第A01期751-755,共5页Low Temperature Physical Letters

摘　　要：我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABi TS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD实验结果表明,Tl-2212薄膜都具有很好的c轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8K,Jc(77K,0T)达到2.6MA/cm2;在YSZ/CeO2/Ni基带上薄膜的Tc可达97.7K,Jc(77K,0T)也可以达到0.45MA/cm2.Preparation and properties of Tl-2212 thin films on YSZ/CeO2 buffered and CeO2/YSZ/CeO2 buffered Ni RABiTS have been studied, respectively. The buffer layers were prepared using PLD method. Tl-2212 thin films were fabricated by magnetron sputtering and post-annealing process. XRD experimental results improved that the Tl-2212 thin films were epitaxial growth on both of the buffered RABiTS. The Tc of 102.8K and Jc （77K, 0T） of 2 MA/cm^2 could be obtained for the Tl-2212 thin film on the RABiTS with CeO2/YSZ/CeO2 layer. Tc of 97.7K and Jc （77K, 0T） of 0.45MA/cm^2 could be obtained for the film on the RABiTS with YSZ/CeO2 layer.

关 键 词：Tl-2212 RABTiS 缓冲层 YSZ CEO2 

分 类 号：O511.3[一般工业技术—材料科学与工程]