脉冲激光沉积原位生长MgB_2薄膜的研究  

THE STUDY OF IN-SITU GROWTH OF MgB_2 FILMS PREPARED BY PULSED LASER DEPOSITION

作　　者：余增强[1] 马小柏[1] 聂瑞娟[1] 姚丹[1] 王福仁[1] 

机构地区：[1]北京大学物理学院人工微结构和介观物理国家重点实验室,北京100871

出　　处：《低温物理学报》2005年第A02期888-892,共5页Low Temperature Physical Letters

基　　金：教育部跨世纪人才基金资助的课题

摘　　要：文章介绍了我们利用脉冲激光沉积(PLD)方法原位生长MgB2超导薄膜的工作.实验采用两步法的方案:高真空条件下在Al2O3(001)衬底上沉积Mg-B混合物加覆盖Mg层的双层结构,然后将该前驱体在630℃左右的Ar气氛中原位退火,成功制备出了有较好重复性的MgB2超导薄膜,其最高的起始转变温度为36.5K,转变宽度在1K左右.我们认为该方法为进一步研究基于MgB2的多层结构器件提供了一种可行的发展思路.We report our work on the in-situ growth of superconducting MgB2 films prepared by pulsed laser deposition. A two-step process was used to fabricate MgB2 films. First, the mixture film of Mg and B was deposited onto Al2O3 （001） substrate in a vacuum of 10^-5 Pa with a Mg cap layer covered, then the precursor was in-situ annealed in Ar flux at about 630℃ for several minutes. Through this process, we have succeeded in preparing the superconducting MgB2 films with a very good reproducibility. The films show an onset transition temperature of 36.5K with the transition width about 1K. We believe this method provides a viable solution for the fabrication of multilayer superconducting device based on MgB2 films.

关 键 词：MgB2薄膜 脉冲激光沉积 原位生长 

分 类 号：O511.3[一般工业技术—材料科学与工程]