非对称型IGBT的低温特性研究  

CRYOGENIC OPERATION OF NON-PUNCH-THROUGH IGBTs

作　　者：张玉林[1,2] 胡高宏[1,2] 丘明[1,2] 杨广辉[1,2] 姚志豪[1,2] 

机构地区：[1]中国科学院电工研究所,北京100080 [2]中国科学院研究生院,北京100039

出　　处：《低温物理学报》2005年第A02期1012-1016,共5页Low Temperature Physical Letters

摘　　要：研究表明，半导体材料在低温环境下性能可以得到很大改善．功率MOSFET低温下的优异特性已被深入揭示．本文研究了NPT型IGBT在77～300K之间的特性，实验表明，低温下NPT型IGBT的通态压降。开关损耗都有明显下降，关断拖尾现象也得到明显改善。而门槛电压略有上升．在此基础上。分析了其低温特性的物理机制以及在超导领域的潜在应用．Detailed experimental data taken for non-punch-through IGBTs between 77K and 300K are presented. The forward voltage drop and the switching dissipation were found to decrease whereas the threshold voltage was found to increase slightly with a decrease in operating temperature. Physical mechanism of NPT-IGBTs operating in low temperature is analyzed. Potential applied fields also were provided.

关 键 词：低温 IGBT NPT 

分 类 号：O513[理学—低温物理]